Fading of pMOS dosimeters over a long period of time
Abstract The fading of radiation‐sensitive p‐channel metal‐oxide‐semiconductor field‐effect transistors (known as RADFETs or pMOS dosimeters) over a long time period of 10 years after irradiation has been investigated. Fading is, in addition to sensitivity, another characteristic of pMOS radiation d...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-06-01
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| Series: | Micro & Nano Letters |
| Online Access: | https://doi.org/10.1049/mna2.12119 |