Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures

Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures

Surface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature. The model mainly considers surface recombination velocity, interface recombination velocity and the space charge region (SCR) at the surface of p ^+...

תיאור מלא

מידע ביבליוגרפי
Main Authors: Jian Liu, Xinlong Chen, Honggang Wang, Yiliang Guo, Yunsheng Qian
פורמט: Article
שפה:English
יצא לאור: IOP Publishing 2020-01-01
סדרה:Materials Research Express
נושאים:
surface photovoltage
multilayer structure
SPS model
minority carrier diffusion length
גישה מקוונת:https://doi.org/10.1088/2053-1591/abb561

אינטרנט

https://doi.org/10.1088/2053-1591/abb561

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