Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures
Surface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature. The model mainly considers surface recombination velocity, interface recombination velocity and the space charge region (SCR) at the surface of p ^+...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/abb561 |
| _version_ | 1797746219638849536 |
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| author | Jian Liu Xinlong Chen Honggang Wang Yiliang Guo Yunsheng Qian |
| author_facet | Jian Liu Xinlong Chen Honggang Wang Yiliang Guo Yunsheng Qian |
| author_sort | Jian Liu |
| collection | DOAJ |
| description | Surface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature. The model mainly considers surface recombination velocity, interface recombination velocity and the space charge region (SCR) at the surface of p ^+ -GaAs. The SPV of the multilayer structure is shown to originate predominantly from the minority carrier diffusion, which caused photovoltage between the surface and bottom. Subsequently, the minority carrier diffusion lengths in p ^+ -GaAs and in p-GaAs are obtained from fitting experimental data to the theoretical model. At the same time, the minority carrier diffusion length in p-GaAs is obtained by illuminating the backside (illuminating on p-GaAs) of the p ^+ -GaAs/p-GaAlAs/p-GaAs. The p ^+ -GaAs in p ^+ -GaAs/p-GaAlAs/p-GaAs structure with different thickness are measured to show the variation of SPS with different thickness, but the experimental parameters are not affected. In multi-layer structure, the SPV contributed by different layers has a great difference with different dark saturation current density. |
| first_indexed | 2024-03-12T15:34:49Z |
| format | Article |
| id | doaj.art-d7af18c82d764fb2ab0a1a1030acb060 |
| institution | Directory Open Access Journal |
| issn | 2053-1591 |
| language | English |
| last_indexed | 2024-03-12T15:34:49Z |
| publishDate | 2020-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Materials Research Express |
| spelling | doaj.art-d7af18c82d764fb2ab0a1a1030acb0602023-08-09T16:18:35ZengIOP PublishingMaterials Research Express2053-15912020-01-017909620210.1088/2053-1591/abb561Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structuresJian Liu0https://orcid.org/0000-0002-1949-697XXinlong Chen1Honggang Wang2Yiliang Guo3Yunsheng Qian4School of Electronic and Optical Engineering, Nanjing University of Science and Technology , Nanjing 210094, Jiangsu, People’s Republic of ChinaNangjing Electronic Devices Institute, Nanjing 210016, Jiangsu, People’s Republic of ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology , Nanjing 210094, Jiangsu, People’s Republic of China; School of Information and Electrical Engineering, Ludong University , Yantai 264025, Shangdong, People’s Republic of ChinaNorth Night Vision Technology CO. LTD, Nanjing 210016, Jiangsu, People’s Republic of ChinaSchool of Electronic and Optical Engineering, Nanjing University of Science and Technology , Nanjing 210094, Jiangsu, People’s Republic of ChinaSurface photovoltage (SPV) in p ^+ -GaAs/p-GaAlAs/p-GaAs has been studied by establishing a multilayer model and measuring the SPV at room temperature. The model mainly considers surface recombination velocity, interface recombination velocity and the space charge region (SCR) at the surface of p ^+ -GaAs. The SPV of the multilayer structure is shown to originate predominantly from the minority carrier diffusion, which caused photovoltage between the surface and bottom. Subsequently, the minority carrier diffusion lengths in p ^+ -GaAs and in p-GaAs are obtained from fitting experimental data to the theoretical model. At the same time, the minority carrier diffusion length in p-GaAs is obtained by illuminating the backside (illuminating on p-GaAs) of the p ^+ -GaAs/p-GaAlAs/p-GaAs. The p ^+ -GaAs in p ^+ -GaAs/p-GaAlAs/p-GaAs structure with different thickness are measured to show the variation of SPS with different thickness, but the experimental parameters are not affected. In multi-layer structure, the SPV contributed by different layers has a great difference with different dark saturation current density.https://doi.org/10.1088/2053-1591/abb561surface photovoltagemultilayer structureSPS modelminority carrier diffusion length |
| spellingShingle | Jian Liu Xinlong Chen Honggang Wang Yiliang Guo Yunsheng Qian Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures Materials Research Express surface photovoltage multilayer structure SPS model minority carrier diffusion length |
| title | Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures |
| title_full | Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures |
| title_fullStr | Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures |
| title_full_unstemmed | Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures |
| title_short | Study of surface photovoltage spectrum in p+-GaAs/p-GaAlAs/p-GaAs structures |
| title_sort | study of surface photovoltage spectrum in p gaas p gaalas p gaas structures |
| topic | surface photovoltage multilayer structure SPS model minority carrier diffusion length |
| url | https://doi.org/10.1088/2053-1591/abb561 |
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