Effects of Gate Stack Composition and Thickness in 2-D Negative Capacitance FETs
Negative capacitance (NC) field-effect transistors (FETs) with 2-D semiconducting channels have become increasingly attractive due to their ability to produce sub-60 mV/dec switching behavior in a physically scalable device. However, it has yet to be determined how gate control, including threshold...
| Автори: | , , , , , , |
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| Формат: | Стаття |
| Мова: | English |
| Опубліковано: |
IEEE
2019-01-01
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| Серія: | IEEE Journal of the Electron Devices Society |
| Предмети: | |
| Онлайн доступ: | https://ieeexplore.ieee.org/document/8735840/ |