Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction
Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and ar...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2022-06-01
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| Series: | Communications Materials |
| Online Access: | https://doi.org/10.1038/s43246-022-00261-3 |