Simulation Study of Silicon-Based Single-Photon Avalanche Diodes with Double Buried Layers and Deep Trench Electrodes
In this paper we present a study of a silicon-based Single-Photon Avalanche Diode (SPAD) in the near-infrared band with double buried layers and deep trench electrodes fabricated by the complimentary metal–oxide semiconductor (CMOS) technology. The deep trench electrodes aim to promote the movement...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-09-01
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| Series: | Crystals |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2073-4352/11/10/1176 |