Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions

In this study, a flexible bioresistive memory with an aluminum/tussah hemolymph/indium tin oxide/polyethylene terephthalate structure is fabricated by using a natural biological material, tussah hemolymph (TH), as the active layer. When different compliance currents (Icc) are applied to the device,...

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Bibliographic Details
Main Authors: Lu Wang, Yukai Zhang, Dianzhong Wen
Format: Article
Language:English
Published: MDPI AG 2021-07-01
Series:Nanomaterials
Subjects:
tussah hemolymph
bioresistive random access memory
bipolar resistive switching
WORM
logic gate
flexible
Online Access:https://www.mdpi.com/2079-4991/11/8/1973

Internet

https://www.mdpi.com/2079-4991/11/8/1973

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