Measurements and calculations of capacitances of BJT and SJT made of silicon carbide
In the paper the results of capacitance-voltage (C-V) characteristics measurements of the current controlled BJT and SJT transistors were presented, for which a programmable measuring system manufactured by Keithley was used. The results of measurements was compared with results of the calculations...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
EDP Sciences
2018-01-01
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| Series: | ITM Web of Conferences |
| Online Access: | https://doi.org/10.1051/itmconf/20181901026 |