The main characteristics of SiGe HBTs at low temperatures

The main characteristics of SiGe HBTs at low temperatures

The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for...

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Bibliographic Details
Main Authors: О. V. Dvornikov, V. А. Tchekhovski, V. L. Dziatlau, N. N. Prokopenko
Format: Article
Language:English
Published: Igor Sikorsky Kyiv Polytechnic Institute 2016-09-01
Series:Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ
Subjects:
SiGe bipolar transistors
low temperatures
temperature of liquid nitrogen
Online Access:http://doi.radap.kpi.ua/article/view/221598

Internet

http://doi.radap.kpi.ua/article/view/221598

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