The main characteristics of SiGe HBTs at low temperatures
The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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Igor Sikorsky Kyiv Polytechnic Institute
2016-09-01
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| Series: | Vìsnik Nacìonalʹnogo Tehnìčnogo Unìversitetu Ukraïni Kììvsʹkij Polìtehnìčnij Ìnstitut: Serìâ Radìotehnìka, Radìoaparatobuduvannâ |
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| Online Access: | http://doi.radap.kpi.ua/article/view/221598 |
| Summary: | The current-voltage curves (CVC) of n-p-n SiGe heterojunction bipolar transistors (HBT) are considered within the temperature range from minus -195˚С up to 25˚С, produced on the SGB25V technology of IHP. The experimental setup, the measurement technique and the connection features of transistors for elimination of the self-excitation are described. The special attention is paid to the temperature dependences of the static base current gain βF in the common-emitter configuration (CEC) and to the output CVC characteristics of transistor in the CEC. |
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| ISSN: | 2310-0397 2310-0389 |