Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors
Interface traps between a gate insulator and beta-gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at l...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-02-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/11/2/494 |