Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors
Interface traps between a gate insulator and beta-gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at l...
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MDPI AG
2021-02-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/11/2/494 |
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| author | Youngseo Park Jiyeon Ma Geonwook Yoo Junseok Heo |
| author_facet | Youngseo Park Jiyeon Ma Geonwook Yoo Junseok Heo |
| author_sort | Youngseo Park |
| collection | DOAJ |
| description | Interface traps between a gate insulator and beta-gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investigated by characterizing electrical properties of the device in a temperature range of 20–300 K. As acceptor-like traps at the interface are frozen below 230 K, the hysteresis becomes negligible but simultaneously the channel mobility significantly degrades because the inactive neutral traps allow additional collisions of electrons at the interface. This is confirmed by the fact that a gate bias adversely affects the channel mobility. An activation energy of such traps is estimated as 170 meV. The activated trap charges’ trapping and de-trapping processes in response to the gate pulse bias reveal that the time constants for the slow and fast processes decrease due to additionally activated traps as the temperature increases. |
| first_indexed | 2024-03-09T00:50:57Z |
| format | Article |
| id | doaj.art-d84407040c0942c28ac35bc7b05e4878 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T00:50:57Z |
| publishDate | 2021-02-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-d84407040c0942c28ac35bc7b05e48782023-12-11T17:14:44ZengMDPI AGNanomaterials2079-49912021-02-0111249410.3390/nano11020494Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect TransistorsYoungseo Park0Jiyeon Ma1Geonwook Yoo2Junseok Heo3Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, KoreaSchool of Electronic Engineering, Soongsil University, Seoul 06938, KoreaSchool of Electronic Engineering, Soongsil University, Seoul 06938, KoreaDepartment of Electrical and Computer Engineering, Ajou University, Suwon 16499, KoreaInterface traps between a gate insulator and beta-gallium oxide (<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>) channel are extensively studied because of the interface trap charge-induced instability and hysteresis. In this work, their effects on mobility degradation at low temperature and hysteresis at high temperature are investigated by characterizing electrical properties of the device in a temperature range of 20–300 K. As acceptor-like traps at the interface are frozen below 230 K, the hysteresis becomes negligible but simultaneously the channel mobility significantly degrades because the inactive neutral traps allow additional collisions of electrons at the interface. This is confirmed by the fact that a gate bias adversely affects the channel mobility. An activation energy of such traps is estimated as 170 meV. The activated trap charges’ trapping and de-trapping processes in response to the gate pulse bias reveal that the time constants for the slow and fast processes decrease due to additionally activated traps as the temperature increases.https://www.mdpi.com/2079-4991/11/2/494<i>β</i>-Ga<sub>2</sub>O<sub>3</sub>interface traphysteresismobility degradationacceptor-like trap |
| spellingShingle | Youngseo Park Jiyeon Ma Geonwook Yoo Junseok Heo Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors Nanomaterials <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> interface trap hysteresis mobility degradation acceptor-like trap |
| title | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors |
| title_full | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors |
| title_fullStr | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors |
| title_full_unstemmed | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors |
| title_short | Interface Trap-Induced Temperature Dependent Hysteresis and Mobility in <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> Field-Effect Transistors |
| title_sort | interface trap induced temperature dependent hysteresis and mobility in i β i ga sub 2 sub o sub 3 sub field effect transistors |
| topic | <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> interface trap hysteresis mobility degradation acceptor-like trap |
| url | https://www.mdpi.com/2079-4991/11/2/494 |
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