Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

Novel Low-Loss Reverse-Conducting Insulated-Gate Bipolar Transitor with Collector-Side Injection-Enhanced Structure

In this paper, a new concept of low-loss Reverse-Conducting Insulated-Gate Bipolar Transistor with Collector-side Injection-Enhanced structure (RC-IGBT-CIE) is proposed and investigated using simulations. In reverse conduction (the on state of the diode mode), the CIE structure enhances the collecto...

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Bibliographic Details
Main Authors: Peijian Zhang, Sheng Qiu, Kunfeng Zhu, Wensuo Chen
Format: Article
Language:English
Published: MDPI AG 2023-12-01
Series:Electronics
Subjects:
RC-IGBT
reverse recovery
reverse conduction
injection-enhanced
switching loss
Online Access:https://www.mdpi.com/2079-9292/13/1/23

Internet

https://www.mdpi.com/2079-9292/13/1/23

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