A novel read circuit for RRAM based on RC delay effect
Abstract In this paper, a novel Resistive Random‐Access Memory (RRAM) read circuit has been designed and verified by simulation based on the RRAM model and parasitic capacitance of the circuit. Simulation results demonstrate the feasibility and effectiveness of the proposed circuit, with accurate re...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-10-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12964 |