Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Atomic Scale Modulation of Self‐Rectifying Resistive Switching by Interfacial Defects

Abstract Higher memory density and faster computational performance of resistive switching cells require reliable array‐accessible architecture. However, selecting a designated cell within a crossbar array without interference from sneak path currents through neighboring cells is a general problem....

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Bibliographic Details
Main Authors: Xing Wu, Kaihao Yu, Dongkyu Cha, Michel Bosman, Nagarajan Raghavan, Xixiang Zhang, Kun Li, Qi Liu, Litao Sun, Kinleong Pey
Format: Article
Language:English
Published: Wiley 2018-06-01
Series:Advanced Science
Subjects:
hafnium dioxide
in situ transmission electron microscopy
interfacial defects
oxygen vacancies
resistive switching
Online Access:https://doi.org/10.1002/advs.201800096

Internet

https://doi.org/10.1002/advs.201800096

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