One-pot synthesis of vertical graphene/h-BN heterostructure utilizing the passivation role of hydrogen

Graphene/hexagonal boron nitride (h-BN) heterostructures have attracted a lot of research interests due to their superior electronic properties in field effect transistor devices and the novel physical properties such as fractional fractal quantum hall effect and massive Dirac fermions. Chemical vap...

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Bibliographic Details
Main Authors: Zhanjie Lu, Qian Yao, Hao Ying, Tianyuan Li, Junfeng Zhang, Le Wang
Format: Article
Language:English
Published: Elsevier 2022-04-01
Series:Results in Physics
Subjects:
Online Access:http://www.sciencedirect.com/science/article/pii/S221137972200167X