Ultra-Low Capacitance Spot PIN Photodiodes
Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 μm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the surface as anodes. Devices with N&#...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10058044/ |