Ultra-Low Capacitance Spot PIN Photodiodes

Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 μm CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P+ bulk wafer and a P-type ring at the surface as anodes. Devices with N&#...

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Main Authors: Bernhard Goll, Kerstin Schneider-Hornstein, Horst Zimmermann
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Photonics Journal
Subjects:
Online Access:https://ieeexplore.ieee.org/document/10058044/
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author Bernhard Goll
Kerstin Schneider-Hornstein
Horst Zimmermann
author_facet Bernhard Goll
Kerstin Schneider-Hornstein
Horst Zimmermann
author_sort Bernhard Goll
collection DOAJ
description Spot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 &#x03BC;m CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P&#x002B; bulk wafer and a P-type ring at the surface as anodes. Devices with N&#x002B; cathode and N&#x002B;&#x002F;N-well cathode are compared. A small N&#x002B;&#x002F;N-well cathode spot reduces the capacitance to 1.47 fF and the N&#x002B; cathode spot leads to a capacitance of 1.07 fF. The light sensitive area of these photodiodes is 707 &#x03BC;m<sup>2</sup>. Simulated electric field distributions show the full depletion of the spot PIN photodiodes. Responsivities from 0.12 A&#x002F;W to 0.16 A&#x002F;W and from 0.50 A&#x002F;W to 0.52 A&#x002F;W for 405 nm and 675 nm, respectively, are achieved. The measured bandwidths for 675 nm light are from 520 MHz to 690 MHz at reverse biases from 15 V to 30 V.
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spelling doaj.art-d9bddab9919a4260970b9aae1fd0d3342023-03-15T23:00:09ZengIEEEIEEE Photonics Journal1943-06552023-01-011521610.1109/JPHOT.2023.325189310058044Ultra-Low Capacitance Spot PIN PhotodiodesBernhard Goll0https://orcid.org/0000-0003-2174-8491Kerstin Schneider-Hornstein1https://orcid.org/0000-0002-7669-2192Horst Zimmermann2https://orcid.org/0000-0003-3221-0769Institute of Electrodynamics, Microwave and Circuit Engineering, Technische Universit&#x00E4;t Wien, Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Technische Universit&#x00E4;t Wien, Vienna, AustriaInstitute of Electrodynamics, Microwave and Circuit Engineering, Technische Universit&#x00E4;t Wien, Vienna, AustriaSpot PIN photodiodes were integrated without any process modifications in a high-voltage 0.18 &#x03BC;m CMOS technology. These photodiodes are a combination of vertical and lateral PIN photodiodes using the P&#x002B; bulk wafer and a P-type ring at the surface as anodes. Devices with N&#x002B; cathode and N&#x002B;&#x002F;N-well cathode are compared. A small N&#x002B;&#x002F;N-well cathode spot reduces the capacitance to 1.47 fF and the N&#x002B; cathode spot leads to a capacitance of 1.07 fF. The light sensitive area of these photodiodes is 707 &#x03BC;m<sup>2</sup>. Simulated electric field distributions show the full depletion of the spot PIN photodiodes. Responsivities from 0.12 A&#x002F;W to 0.16 A&#x002F;W and from 0.50 A&#x002F;W to 0.52 A&#x002F;W for 405 nm and 675 nm, respectively, are achieved. The measured bandwidths for 675 nm light are from 520 MHz to 690 MHz at reverse biases from 15 V to 30 V.https://ieeexplore.ieee.org/document/10058044/CMOSspot photodiodesfinger photodiodeslow capacitancePIN photodiodes
spellingShingle Bernhard Goll
Kerstin Schneider-Hornstein
Horst Zimmermann
Ultra-Low Capacitance Spot PIN Photodiodes
IEEE Photonics Journal
CMOS
spot photodiodes
finger photodiodes
low capacitance
PIN photodiodes
title Ultra-Low Capacitance Spot PIN Photodiodes
title_full Ultra-Low Capacitance Spot PIN Photodiodes
title_fullStr Ultra-Low Capacitance Spot PIN Photodiodes
title_full_unstemmed Ultra-Low Capacitance Spot PIN Photodiodes
title_short Ultra-Low Capacitance Spot PIN Photodiodes
title_sort ultra low capacitance spot pin photodiodes
topic CMOS
spot photodiodes
finger photodiodes
low capacitance
PIN photodiodes
url https://ieeexplore.ieee.org/document/10058044/
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AT horstzimmermann ultralowcapacitancespotpinphotodiodes