Properties of AlxGa1−xAs grown from a mixed Ga–Bi melt
Abstract Thick smoothly graded AlxGa1−xAs layers (50–100 µm) are used in light-emitting diode structures and also for creation of high-power photovoltaic converters with side-input of laser radiation. To achieve the required thickness of the AlxGa1−xAs layer the high temperature LPE growth technique...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2024-01-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-024-51234-0 |