Uniqueness of parameter estimates obtained from fitting free carrier absorption data of silicon wafers
In this paper, a data processing method is employed to improve the uniqueness of the electronic transport parameters (the carrier lifetime, carrier diffusion coefficient, and front and rear surface recombination velocities) obtained from fitting free carrier absorption data of silicon wafers. By emp...
Main Authors: | Qian Wang, Chenyang Wei, Lei Gong, Liguo Wang, Yaqing Li, Linqiu Tan, Wei Wang |
---|---|
Format: | Article |
Language: | English |
Published: |
AIP Publishing LLC
2021-10-01
|
Series: | AIP Advances |
Online Access: | http://dx.doi.org/10.1063/5.0059258 |
Similar Items
-
Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry
by: Qian Wang, et al.
Published: (2020-03-01) -
Contactless determination of doping concentration and resistivity of silicon wafers with cavity ring-down technique
by: Qian Wang, et al.
Published: (2020-03-01) -
Methods to obtain varying densities of Ag nanoparticles on YSZ silicon wafer
by: Ooi, Ching Fei.
Published: (2013) -
Variations in Minority Carrier-Trapping Effects Caused by Hydrogen Passivation in Multicrystalline Silicon Wafer
by: Yujin Jung, et al.
Published: (2020-11-01) -
Precision crack-off method for silicon wafering
by: Tan, Gary Wei Liang.
Published: (2013)