The Study of High Breakdown Voltage Vertical GaN-on-GaN <i>p-i-n</i> Diode with Modified Mesa Structure

The Study of High Breakdown Voltage Vertical GaN-on-GaN <i>p-i-n</i> Diode with Modified Mesa Structure

In this paper, we fabricated Gallium Nitride (GaN) vertical <i>p</i>-<i>i</i>-<i>n</i> diodes grown on free-standing GaN (FS-GaN) substrates. This homogeneous epitaxy led to thicker GaN epi-layers grown on the FS-GaN substrate, but a high crystalline quality was m...

Full description

Bibliographic Details
Main Authors: Wen-Chieh Ho, Yao-Hsing Liu, Wen-Hsuan Wu, Sung-Wen Huang Chen, Jerry Tzou, Hao-Chung Kuo, Chia-Wei Sun
Format: Article
Language:English
Published: MDPI AG 2020-08-01
Series:Crystals
Subjects:
Gallium Nitride (GaN)
vertical <i>p</i>-<i>i</i>-<i>n</i> diodes
FS-GaN substrate
vertical diode
Online Access:https://www.mdpi.com/2073-4352/10/8/712

Internet

https://www.mdpi.com/2073-4352/10/8/712

Similar Items