Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method

This paper demonstrates the improvement of device linearity in AlGaN/GaN heterostructure field effect transistors (HFETs) using polarization Coulomb field (PCF) scattering and investigates the relationship between device linearity and PCF scattering under 10 and 20 V drain bias. The mobility of the...

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Bibliographic Details
Main Authors: Yongxiong Yang, Zhaojun Lin, Mingyan Wang, Heng Zhou, Yang Liu, Guangyuan Jiang
Format: Article
Language:English
Published: AIP Publishing LLC 2021-08-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/5.0056337

Internet

http://dx.doi.org/10.1063/5.0056337

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