Mathematical modeling of point defect cluster formation in silicon based on molecular dynamic approach

Mathematical modeling of point defect cluster formation in silicon based on molecular dynamic approach

A very important task on the way of improving the technologies of synthesizing highly effective light-emitting diodes on the basis of silicon is theoretical research into the formation of point defect clusters. One method of obtaining silicon with photoluminescent properties is radiation impact. It...

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Bibliographic Details
Main Authors: Karine K. Abgaryan, Olga V. Volodina, Sergey I. Uvarov
Format: Article
Language:English
Published: Pensoft Publishers 2015-09-01
Series:Modern Electronic Materials
Subjects:
Multi-scale modeling
Molecular dynamic
First-principles calculations
Clusters of point defects
III–V semiconductors
Defects in crystals
Online Access:http://www.sciencedirect.com/science/article/pii/S2452177916000086

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http://www.sciencedirect.com/science/article/pii/S2452177916000086

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