Mathematical modeling of point defect cluster formation in silicon based on molecular dynamic approach
A very important task on the way of improving the technologies of synthesizing highly effective light-emitting diodes on the basis of silicon is theoretical research into the formation of point defect clusters. One method of obtaining silicon with photoluminescent properties is radiation impact. It...
Main Authors: | Karine K. Abgaryan, Olga V. Volodina, Sergey I. Uvarov |
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Format: | Article |
Language: | English |
Published: |
Pensoft Publishers
2015-09-01
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Series: | Modern Electronic Materials |
Subjects: | |
Online Access: | http://www.sciencedirect.com/science/article/pii/S2452177916000086 |
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