Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

Effect of neutron irradiation on characteristics of power ІnGaN/GaN light-emitting diodes

Effect of the reactor fast neutron flux (E = 2 MeV, Ф = 2⋅1014 n/cm2) on the current-voltage, capacitance-voltage characteristics, the electroluminescence intensity of power ІnGaN/GaN LEDs on the SіC and AuSn/Si substrates are studied. It was revealed that radiation hardness of InGaN/GaN heterostruc...

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Bibliographic Details
Main Authors: A. I. Vlasenko, V. P. Veleschuk, Z. K. Vlasenko, M. P. Kisselyuk, P. G. Lytovchenko, I. V. Petrenko, V. P. Tartachnyk, M. B. Pinkovska
Format: Article
Language:English
Published: Institute for Nuclear Research, National Academy of Sciences of Ukraine 2015-12-01
Series:Âderna Fìzika ta Energetika
Subjects:
ІnGaN/GaN light emitting diode
irradiation
current-volt characteristic
Online Access:http://jnpae.kinr.kiev.ua/16.4/html/16.4.0362.html

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http://jnpae.kinr.kiev.ua/16.4/html/16.4.0362.html

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