Recent Advances in Organic-inorganic Hybrid Photoresists
Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semiconductor industries over the past few decades. It is obvious that extreme ultraviolet (EUV) lithography...
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| Format: | Article |
| Language: | English |
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JommPublish
2021-03-01
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| Series: | Journal of Microelectronic Manufacturing |
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| Online Access: | http://www.jommpublish.org/p/69/ |
| _version_ | 1818624509678190592 |
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| author | Zhihao Wang Xindi Yao Huiwen An Yake Wang Jinping Chen Shuangqing Wang Xudong Guo Tianjun Yu Yi Zeng Guoqiang Yang Yi Li |
| author_facet | Zhihao Wang Xindi Yao Huiwen An Yake Wang Jinping Chen Shuangqing Wang Xudong Guo Tianjun Yu Yi Zeng Guoqiang Yang Yi Li |
| author_sort | Zhihao Wang |
| collection | DOAJ |
| description | Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semiconductor industries over the past few decades. It is obvious that extreme ultraviolet (EUV) lithography has become the next-generation lithography technology. The development of comprehensive performance EUV resist is one of the most critical issues. However, organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography. Pure inorganic photoresists such as metal salts, hydrogen silsesquioxane (HSQ) are expected for EUV lithography due to their high resistance and high resolution. But the low sensitivity makes them not suitable for high volume manufacturing (HVM). Organic-inorganic hybrid photoresists, containing both organic and inorganic components, are regarded as one of the most promising EUV resists. They combine both merits of organic and inorganic materials and have significant advantages in machinability, etching resistance, EUV absorption, and chemical/thermal stability. Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrial-grade patterns below 10 nm. This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade. |
| first_indexed | 2024-12-16T18:58:05Z |
| format | Article |
| id | doaj.art-da8c4325456f45faba6b5b2906b0e6c9 |
| institution | Directory Open Access Journal |
| issn | 2578-3769 2578-3769 |
| language | English |
| last_indexed | 2024-12-16T18:58:05Z |
| publishDate | 2021-03-01 |
| publisher | JommPublish |
| record_format | Article |
| series | Journal of Microelectronic Manufacturing |
| spelling | doaj.art-da8c4325456f45faba6b5b2906b0e6c92022-12-21T22:20:28ZengJommPublishJournal of Microelectronic Manufacturing2578-37692578-37692021-03-014110.33079/jomm.21040101Recent Advances in Organic-inorganic Hybrid PhotoresistsZhihao Wang0Xindi Yao1Huiwen An2Yake Wang3Jinping Chen4Shuangqing Wang5Xudong Guo6Tianjun Yu7Yi Zeng8Guoqiang Yang9Yi Li10Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190Beijing National Laboratory for Molecular Sciences, (, BNLMS, ), Key laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, China, Beijing 100190Beijing National Laboratory for Molecular Sciences, (, BNLMS, ), Key laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Beijing National Laboratory for Molecular Sciences, (, BNLMS, ), Key laboratory of Photochemistry, Institute of Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, China, Beijing 100190 University of Chinese Academy of Sciences, China, Beijing 100039Photoresists are radiation-sensitive materials used for forming patterns to build up IC devices. To date, most photoresists have been based on organic polymers, which have been dominating the semiconductor industries over the past few decades. It is obvious that extreme ultraviolet (EUV) lithography has become the next-generation lithography technology. The development of comprehensive performance EUV resist is one of the most critical issues. However, organic polymeric photoresists are difficult to meet the harsh requirements of EUV lithography. Pure inorganic photoresists such as metal salts, hydrogen silsesquioxane (HSQ) are expected for EUV lithography due to their high resistance and high resolution. But the low sensitivity makes them not suitable for high volume manufacturing (HVM). Organic-inorganic hybrid photoresists, containing both organic and inorganic components, are regarded as one of the most promising EUV resists. They combine both merits of organic and inorganic materials and have significant advantages in machinability, etching resistance, EUV absorption, and chemical/thermal stability. Organic-inorganic hybrid photoresists are considered as ideal materials for realizing industrial-grade patterns below 10 nm. This review mainly focuses on the development of organic-inorganic hybrid photoresists over the past decade.http://www.jommpublish.org/p/69/organic-inorganic hybrid photoresisteuv lithographynanoclusternanoparticleorganometallic complex |
| spellingShingle | Zhihao Wang Xindi Yao Huiwen An Yake Wang Jinping Chen Shuangqing Wang Xudong Guo Tianjun Yu Yi Zeng Guoqiang Yang Yi Li Recent Advances in Organic-inorganic Hybrid Photoresists Journal of Microelectronic Manufacturing organic-inorganic hybrid photoresist euv lithography nanocluster nanoparticle organometallic complex |
| title | Recent Advances in Organic-inorganic Hybrid Photoresists |
| title_full | Recent Advances in Organic-inorganic Hybrid Photoresists |
| title_fullStr | Recent Advances in Organic-inorganic Hybrid Photoresists |
| title_full_unstemmed | Recent Advances in Organic-inorganic Hybrid Photoresists |
| title_short | Recent Advances in Organic-inorganic Hybrid Photoresists |
| title_sort | recent advances in organic inorganic hybrid photoresists |
| topic | organic-inorganic hybrid photoresist euv lithography nanocluster nanoparticle organometallic complex |
| url | http://www.jommpublish.org/p/69/ |
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