High-Performance Memristive Synapse Composed of Ferroelectric ZnVO-Based Schottky Junction

In pursuit of realizing neuromorphic computing devices, we demonstrated the high-performance synaptic functions on the top-to-bottom Au/ZnVO/Pt two-terminal ferroelectric Schottky junction (FSJ) device architecture. The active layer of ZnVO exhibited the ferroelectric characteristics because of the...

Full description

Bibliographic Details
Main Authors: Youngmin Lee, Chulwoong Hong, Sankar Sekar, Sejoon Lee
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/14/6/506