Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions
The safe operating area is an operating area with high reliability for SiC MOSFET, and its degradation may cause power electronic system failure. The safe-operating-area degradation and the failure modes of 1200 V/66A SiC MOSFET caused by repetitive short-circuit stress with different short-circuit...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370422000232 |