Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions
The safe operating area is an operating area with high reliability for SiC MOSFET, and its degradation may cause power electronic system failure. The safe-operating-area degradation and the failure modes of 1200 V/66A SiC MOSFET caused by repetitive short-circuit stress with different short-circuit...
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| Format: | Article |
| Language: | English |
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Elsevier
2023-03-01
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| Series: | Power Electronic Devices and Components |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772370422000232 |
| _version_ | 1797900663205658624 |
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| author | Ziyang Zhang Lin Liang Haoyang Fei |
| author_facet | Ziyang Zhang Lin Liang Haoyang Fei |
| author_sort | Ziyang Zhang |
| collection | DOAJ |
| description | The safe operating area is an operating area with high reliability for SiC MOSFET, and its degradation may cause power electronic system failure. The safe-operating-area degradation and the failure modes of 1200 V/66A SiC MOSFET caused by repetitive short-circuit stress with different short-circuit durations and repetition rates are investigated. A short circuit test platform with circuit protection is configured to degrade DUT(device under test), and the safe operating area is characterized after repetitive short circuit stress is applied. The degradation mechanism of the safe operating area is explained by the 1-D electro-thermal coupling model based on Sentaurus TCAD. When the critical short-circuit duration is 12μs, the single short-circuit failure mode of DUT with 400 V dc-bus voltage is a gate-source short-circuit failure. From the short circuit test result, the failure modes under repetitive short-circuit conditions include gate-source short-circuit failure and thermal runaway, depending on the repetitive rates. For the same short-circuit time interval, when the short-circuit duration is 10μs, the weakest boundary of the safe operating area is the blocking voltage. When the short-circuit duration is 2μs, all three boundaries of the safe operating area are contracted. These results are confined to 400 V dc-bus voltage, 25 °C case temperature, and 18 V/-3 V gate-source voltage. |
| first_indexed | 2024-04-10T08:49:33Z |
| format | Article |
| id | doaj.art-daa127b9eddc4fbe8def79f4342bb97b |
| institution | Directory Open Access Journal |
| issn | 2772-3704 |
| language | English |
| last_indexed | 2024-04-10T08:49:33Z |
| publishDate | 2023-03-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Power Electronic Devices and Components |
| spelling | doaj.art-daa127b9eddc4fbe8def79f4342bb97b2023-02-22T04:32:36ZengElsevierPower Electronic Devices and Components2772-37042023-03-014100026Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditionsZiyang Zhang0Lin Liang1Haoyang Fei2State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaCorresponding author.; State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaState Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, ChinaThe safe operating area is an operating area with high reliability for SiC MOSFET, and its degradation may cause power electronic system failure. The safe-operating-area degradation and the failure modes of 1200 V/66A SiC MOSFET caused by repetitive short-circuit stress with different short-circuit durations and repetition rates are investigated. A short circuit test platform with circuit protection is configured to degrade DUT(device under test), and the safe operating area is characterized after repetitive short circuit stress is applied. The degradation mechanism of the safe operating area is explained by the 1-D electro-thermal coupling model based on Sentaurus TCAD. When the critical short-circuit duration is 12μs, the single short-circuit failure mode of DUT with 400 V dc-bus voltage is a gate-source short-circuit failure. From the short circuit test result, the failure modes under repetitive short-circuit conditions include gate-source short-circuit failure and thermal runaway, depending on the repetitive rates. For the same short-circuit time interval, when the short-circuit duration is 10μs, the weakest boundary of the safe operating area is the blocking voltage. When the short-circuit duration is 2μs, all three boundaries of the safe operating area are contracted. These results are confined to 400 V dc-bus voltage, 25 °C case temperature, and 18 V/-3 V gate-source voltage.http://www.sciencedirect.com/science/article/pii/S2772370422000232Failure modeSafe operating areaDegradationSiC MOSFETGate oxide damageThermal runaway |
| spellingShingle | Ziyang Zhang Lin Liang Haoyang Fei Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions Power Electronic Devices and Components Failure mode Safe operating area Degradation SiC MOSFET Gate oxide damage Thermal runaway |
| title | Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| title_full | Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| title_fullStr | Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| title_full_unstemmed | Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| title_short | Investigation on safe-operating-area degradation and failure modes of SiC MOSFETs under repetitive short-circuit conditions |
| title_sort | investigation on safe operating area degradation and failure modes of sic mosfets under repetitive short circuit conditions |
| topic | Failure mode Safe operating area Degradation SiC MOSFET Gate oxide damage Thermal runaway |
| url | http://www.sciencedirect.com/science/article/pii/S2772370422000232 |
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