Development of 3C-SiC MOSFETs
The paper reviews the development of the 3C-SiC MOSFETs in a unique development project combining the material and device expertise of HAST (Hoya Advanced Semiconductor Technologies) and Acreo, respectively. The motivation for the development of the 3C-SiC MOSFETs and the summary of the results fro...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
National Institute of Telecommunications
2023-06-01
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| Series: | Journal of Telecommunications and Information Technology |
| Subjects: | |
| Online Access: | https://jtit.pl/jtit/article/view/808 |