Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC

Properties of <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> Deep-Level Defects in <i>n</i>-Type Epitaxial and High-Purity Semi-Insulating 4<i>H</i>-SiC

For the first time, the <i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> defects with closely spaced energy levels having negative-<i>U</i> properties are revealed in high-purity semi-insulating (HPSI) 4<i>H</i>-SiC using Laplace-t...

Full description

Bibliographic Details
Main Authors: Paweł Kamiński, Roman Kozłowski, Jarosław Żelazko, Kinga Kościewicz, Tymoteusz Ciuk
Format: Article
Language:English
Published: MDPI AG 2024-06-01
Series:Crystals
Subjects:
4<i>H</i>-SiC
<i>Z</i><sub>1</sub> and <i>Z</i><sub>2</sub> defects
negative-<i>U</i> properties
LDLTS
LPITS
Online Access:https://www.mdpi.com/2073-4352/14/6/536

Internet

https://www.mdpi.com/2073-4352/14/6/536

Similar Items