Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga<sub>2</sub>O<sub>3</sub> Layers

Numerical Modelling for the Experimental Improvement of Growth Uniformity in a Halide Vapor Phase Epitaxy Reactor for Manufacturing β-Ga<sub>2</sub>O<sub>3</sub> Layers

The development of growth processes for the synthesis of high-quality epitaxial layers is one of the requirements for utilizing the ultrawide band gap semiconductor Ga<sub>2</sub>O<sub>3</sub> for high-voltage, high-power electronics. A halide vapor phase epitaxy (HVPE) proce...

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Bibliographic Details
Main Authors: Galia Pozina, Chih-Wei Hsu, Natalia Abrikossova, Carl Hemmingsson
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Crystals
Subjects:
computer simulation
growth models
halide vapor phase epitaxy
β-Ga<sub>2</sub>O<sub>3</sub>
ultrawide bandgap semiconductors
Online Access:https://www.mdpi.com/2073-4352/12/12/1790

Internet

https://www.mdpi.com/2073-4352/12/12/1790

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