Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates
We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO<sub>2</sub>/5 nm Ge-HfO<sub>2</sub> intermediate layer/8 nm tunnel HfO<sub>2</sub>/<i>p<...
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/2/279 |
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| author | Mircea Dragoman Adrian Dinescu Daniela Dragoman Cătălin Palade Valentin Şerban Teodorescu Magdalena Lidia Ciurea |
| author_facet | Mircea Dragoman Adrian Dinescu Daniela Dragoman Cătălin Palade Valentin Şerban Teodorescu Magdalena Lidia Ciurea |
| author_sort | Mircea Dragoman |
| collection | DOAJ |
| description | We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO<sub>2</sub>/5 nm Ge-HfO<sub>2</sub> intermediate layer/8 nm tunnel HfO<sub>2</sub>/<i>p</i>-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the <i>p</i>-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current. |
| first_indexed | 2024-03-10T00:48:27Z |
| format | Article |
| id | doaj.art-db383b9361f349009490df2522defb76 |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-10T00:48:27Z |
| publishDate | 2022-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-db383b9361f349009490df2522defb762023-11-23T14:55:47ZengMDPI AGNanomaterials2079-49912022-01-0112227910.3390/nano12020279Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic GatesMircea Dragoman0Adrian Dinescu1Daniela Dragoman2Cătălin Palade3Valentin Şerban Teodorescu4Magdalena Lidia Ciurea5National Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, RomaniaNational Institute for Research and Development in Microtechnology (IMT), Str. Erou Iancu Nicolae 126A, 077190 Voluntari, RomaniaFaculty of Physics, Univ. of Bucharest, P.O. Box MG-11, 077125 Magurele, RomaniaNational Institute of Materials Physics, Str. Atomistilor 405 A, 077125 Magurele, RomaniaAcademy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, RomaniaAcademy of Romanian Scientists, Str. Ilfov 3, 050094 Bucharest, RomaniaWe present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO<sub>2</sub>/5 nm Ge-HfO<sub>2</sub> intermediate layer/8 nm tunnel HfO<sub>2</sub>/<i>p</i>-Si substrate. The intermediate layer is ferroelectric and acts as a floating gate. All transistors have two top gates, while the <i>p</i>-Si substrate is acting as a back gate. We show that these FETs are acting memtransistors, working as two-input reconfigurable logic gates with memory, the type of the logic gate depending only on the values of the applied gate voltages and the choice of a threshold current.https://www.mdpi.com/2079-4991/12/2/279grapheneferroelectricslogical gatesintelligent transistors |
| spellingShingle | Mircea Dragoman Adrian Dinescu Daniela Dragoman Cătălin Palade Valentin Şerban Teodorescu Magdalena Lidia Ciurea Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates Nanomaterials graphene ferroelectrics logical gates intelligent transistors |
| title | Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates |
| title_full | Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates |
| title_fullStr | Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates |
| title_full_unstemmed | Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates |
| title_short | Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates |
| title_sort | graphene ferroelectric ge doped hfo sub 2 sub adaptable transistors acting as reconfigurable logic gates |
| topic | graphene ferroelectrics logical gates intelligent transistors |
| url | https://www.mdpi.com/2079-4991/12/2/279 |
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