Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates

Graphene/Ferroelectric (Ge-Doped HfO<sub>2</sub>) Adaptable Transistors Acting as Reconfigurable Logic Gates

We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO<sub>2</sub>/5 nm Ge-HfO<sub>2</sub> intermediate layer/8 nm tunnel HfO<sub>2</sub>/<i>p<...

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Bibliographic Details
Main Authors: Mircea Dragoman, Adrian Dinescu, Daniela Dragoman, Cătălin Palade, Valentin Şerban Teodorescu, Magdalena Lidia Ciurea
Format: Article
Language:English
Published: MDPI AG 2022-01-01
Series:Nanomaterials
Subjects:
graphene
ferroelectrics
logical gates
intelligent transistors
Online Access:https://www.mdpi.com/2079-4991/12/2/279

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