Effect of annealing conditions on dopants activation and stress conservation in silicon-germanium
As the miniaturization of the size of semiconductor components, the silicon-based transistor has reached its material limitations, so that researching the new materials (silicon-germanium compound) to replace silicon is more important. The ion implantation technology is conducted to discuss the acti...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5053237 |