Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution
This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 μm pitch pixels with a large detection area of 1.68 cm<sup>2</sup>; Chip B with 2.8 μm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance...
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| Format: | Article |
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MDPI AG
2022-04-01
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| Series: | Sensors |
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| Online Access: | https://www.mdpi.com/1424-8220/22/7/2770 |
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| author | Yuki Sugama Yoshiaki Watanabe Rihito Kuroda Masahiro Yamamoto Tetsuya Goto Toshiro Yasuda Hiroshi Hamori Naoya Kuriyama Shigetoshi Sugawa |
| author_facet | Yuki Sugama Yoshiaki Watanabe Rihito Kuroda Masahiro Yamamoto Tetsuya Goto Toshiro Yasuda Hiroshi Hamori Naoya Kuriyama Shigetoshi Sugawa |
| author_sort | Yuki Sugama |
| collection | DOAJ |
| description | This paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 μm pitch pixels with a large detection area of 1.68 cm<sup>2</sup>; Chip B with 2.8 μm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10<sup>−19</sup> F) at an input voltage of 20 V and less than 10 zF (10<sup>−20</sup> F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated. |
| first_indexed | 2024-03-09T11:25:58Z |
| format | Article |
| id | doaj.art-db5b331b36304019afa6952a847646c5 |
| institution | Directory Open Access Journal |
| issn | 1424-8220 |
| language | English |
| last_indexed | 2024-03-09T11:25:58Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Sensors |
| spelling | doaj.art-db5b331b36304019afa6952a847646c52023-12-01T00:05:18ZengMDPI AGSensors1424-82202022-04-01227277010.3390/s22072770Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High ResolutionYuki Sugama0Yoshiaki Watanabe1Rihito Kuroda2Masahiro Yamamoto3Tetsuya Goto4Toshiro Yasuda5Hiroshi Hamori6Naoya Kuriyama7Shigetoshi Sugawa8Graduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanGraduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanGraduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanGraduate School of Engineering, Tohoku University, 6-6-11-811, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanOHT Inc., 1118-1, Nishinakajo, Kannabe-cho, Fukuyama 720-2103, Hiroshima, JapanOHT Inc., 1118-1, Nishinakajo, Kannabe-cho, Fukuyama 720-2103, Hiroshima, JapanLAPIS Semiconductor Co., Ltd., 2-4-8, Shin-Yokohama, Kohoku-ku, Yokohama 222-8575, Kanagawa, JapanNew Industry Creation Hatchery Center, Tohoku University, 6-6-10, Aza-Aoba, Aramaki, Aoba-ku, Sendai 980-8579, Miyagi, JapanThis paper presents newly developed two high-precision CMOS proximity capacitance image sensors: Chip A with 12 μm pitch pixels with a large detection area of 1.68 cm<sup>2</sup>; Chip B with 2.8 μm pitch 1.8 M pixels for a higher resolution. Both fabricated chips achieved a capacitance detection precision of less than 100 zF (10<sup>−19</sup> F) at an input voltage of 20 V and less than 10 zF (10<sup>−20</sup> F) at 300 V due to the noise cancelling technique. Furthermore, by using multiple input pulse amplitudes, a capacitance detection dynamic range of up to 123 dB was achieved. The spatial resolution improvement was confirmed by the experimentally obtained modulation transfer function for Chip B with various line and space pattens. The examples of capacitance imaging using the fabricated chips were also demonstrated.https://www.mdpi.com/1424-8220/22/7/2770CMOSproximity capacitanceimage sensorhigh precisionlarge formathigh resolution |
| spellingShingle | Yuki Sugama Yoshiaki Watanabe Rihito Kuroda Masahiro Yamamoto Tetsuya Goto Toshiro Yasuda Hiroshi Hamori Naoya Kuriyama Shigetoshi Sugawa Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution Sensors CMOS proximity capacitance image sensor high precision large format high resolution |
| title | Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution |
| title_full | Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution |
| title_fullStr | Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution |
| title_full_unstemmed | Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution |
| title_short | Two High-Precision Proximity Capacitance CMOS Image Sensors with Large Format and High Resolution |
| title_sort | two high precision proximity capacitance cmos image sensors with large format and high resolution |
| topic | CMOS proximity capacitance image sensor high precision large format high resolution |
| url | https://www.mdpi.com/1424-8220/22/7/2770 |
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