Studies on a-Se/n-Si and a-Te/n-Si heterojunctions
Heterojunctions are fabricated by depositing amorphous selenium (a-Se) and amorphous tellurium (a-Te) films on n-type single (n-Si) wafers by the method of vacuum evaporation. The silicon wafers have surface orientation of (111). Resistivity of each silicon wafer is 5Ω-cm and carrier concentration o...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Joint Coordination Centre of the World Bank assisted National Agricultural Research Programme (NARP)
2005-09-01
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| Series: | Journal of Applied Sciences and Environmental Management |
| Online Access: | https://www.ajol.info/index.php/jasem/article/view/17272 |