Kinetics of transformation of the atomic step bunches shape under electromigration conditions on the Si(001) surface

The quality of the epitaxial structures is significantly influenced by both the initial surface morphology and its transformation during growth. One of the phenomena of surface roughness of silicon occurring during annealing, growth, exposure to electric current, and adsorption of foreign material i...

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Bibliographic Details
Main Authors: Marina E. Razzhivina, Ekaterina E. Rodyakina, Sergey V. Sitnikov
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2021-10-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
Online Access:https://ntv.ifmo.ru/file/article/20744.pdf