Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications

In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs) by using metal extensions (Hafnium) at the s...

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Bibliografiske detaljer
Main Authors:	Faisal Bashir, Abdullah G. Alharbi, Sajad A. Loan
Format:	Article
Sprog:	English
Udgivet:	IEEE 2018-01-01
Serier:	IEEE Journal of the Electron Devices Society
Fag:	Electrostatically doped charge plasma source extensions Schottky barrier DSL SOI
Online adgang:	https://ieeexplore.ieee.org/document/8067464/

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