Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs) by using metal extensions (Hafnium) at the s...
| Hlavní autoři: | , , |
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| Médium: | Článek |
| Jazyk: | English |
| Vydáno: |
IEEE
2018-01-01
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| Edice: | IEEE Journal of the Electron Devices Society |
| Témata: | |
| On-line přístup: | https://ieeexplore.ieee.org/document/8067464/ |