Electrostatically Doped DSL Schottky Barrier MOSFET on SOI for Low Power Applications
In this paper, we propose and simulate a novel Schottky barrier MOSFET (SB-MOSFET) with improved performance in comparison to the conventional SB-MOSFET. The proposed device employs charge plasma/electrostatic doping-based dopant segregation layers (DSLs) by using metal extensions (Hafnium) at the s...
| Main Authors: | , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
IEEE
2018-01-01
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| 叢編: | IEEE Journal of the Electron Devices Society |
| 主題: | |
| 在線閱讀: | https://ieeexplore.ieee.org/document/8067464/ |