First-principles calculation of P-type Mg3Sb2 thermoelectric performance modification by Ge and Si doping
Mg3Sb2 has been considered a highly promising thermoelectric material for mid-temperature applications. Optimizing the properties of the material is crucial for accelerating its commercial use. In this work, first-principles molecular simulations of P-type Mg3Sb2 doped with the carbon group elements...
| Main Authors: | , , , , |
|---|---|
| פורמט: | Article |
| שפה: | English |
| יצא לאור: |
AIP Publishing LLC
2024-05-01
|
| סדרה: | AIP Advances |
| גישה מקוונת: | http://dx.doi.org/10.1063/5.0205337 |