Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

Experimental Determination, Modeling, and Simulation of Nonlinear Thermal Effects in Bipolar Transistors under Static Conditions: A Critical Review and Update

This paper presents a comprehensive overview of nonlinear thermal effects in bipolar transistors under static conditions. The influence of these effects on the thermal resistance is theoretically explained and analytically modeled using the single-semiconductor assumption. A detailed review of exper...

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Bibliographic Details
Main Authors: Vincenzo d’Alessandro, Antonio Pio Catalano, Ciro Scognamillo, Markus Müller, Michael Schröter, Peter J. Zampardi, Lorenzo Codecasa
Format: Article
Language:English
Published: MDPI AG 2022-07-01
Series:Energies
Subjects:
compact transistor model
finite-element method (FEM)
gallium arsenide (GaAs)
heterojunction bipolar transistor (HBT)
nonlinear thermal effects
silicon-germanium (SiGe)
Online Access:https://www.mdpi.com/1996-1073/15/15/5457

Internet

https://www.mdpi.com/1996-1073/15/15/5457

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