Features of the model of main information failures in digital CMOS VLSI at impact of the radiation
The methods of information security, which are based on the use of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately de...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
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Joint Stock Company "Experimental Scientific and Production Association SPELS
2018-03-01
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| Series: | Безопасность информационных технологий |
| Subjects: | |
| Online Access: | https://bit.mephi.ru/index.php/bit/article/view/1091 |
| _version_ | 1797714861904363520 |
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| author | Vyacheslav M. Barbashov Nikolai S. Trushkin |
| author_facet | Vyacheslav M. Barbashov Nikolai S. Trushkin |
| author_sort | Vyacheslav M. Barbashov |
| collection | DOAJ |
| description | The methods of information security, which are based on the use of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata. Moreover, the nature of their changes during irradiation depends on many factors, including the type of radiation, its intensity and range, type a criteria parameter characterizing the radiation resistance of ICs and work mode. Therefore, in different ranges of levels or intensities of the impact of the IC model can be either of fuzzy or probabilistic nature. Carrying out such a comparison is an essential step in the overall analysis of the IC radiation resistance. |
| first_indexed | 2024-03-12T07:58:15Z |
| format | Article |
| id | doaj.art-dc38af35880046a0bc74003f7769b2a8 |
| institution | Directory Open Access Journal |
| issn | 2074-7128 2074-7136 |
| language | English |
| last_indexed | 2024-03-12T07:58:15Z |
| publishDate | 2018-03-01 |
| publisher | Joint Stock Company "Experimental Scientific and Production Association SPELS |
| record_format | Article |
| series | Безопасность информационных технологий |
| spelling | doaj.art-dc38af35880046a0bc74003f7769b2a82023-09-02T20:04:33ZengJoint Stock Company "Experimental Scientific and Production Association SPELSБезопасность информационных технологий2074-71282074-71362018-03-01251344010.26583/bit.2018.1.031081Features of the model of main information failures in digital CMOS VLSI at impact of the radiationVyacheslav M. Barbashov0Nikolai S. Trushkin1National Nuclear Research University MEPHI (Moscow Engineering Physics Institute)National Nuclear Research University MEPHI (Moscow Engineering Physics Institute)The methods of information security, which are based on the use of functional-logical modeling of very large digital integrated circuits (VLSI) under the influence of ionizing radiation are considered. It is shown that the multiplicity of the node and the power of the spectrum are more accurately described when using the concept of fuzzy multiplicity. Methods are proposed for predicting LSI failures when exposed to ionizing radiation, which are based on the model of fuzzy digital and probabilistic reliability automata. Moreover, the nature of their changes during irradiation depends on many factors, including the type of radiation, its intensity and range, type a criteria parameter characterizing the radiation resistance of ICs and work mode. Therefore, in different ranges of levels or intensities of the impact of the IC model can be either of fuzzy or probabilistic nature. Carrying out such a comparison is an essential step in the overall analysis of the IC radiation resistance.https://bit.mephi.ru/index.php/bit/article/view/1091topological probabilistic models, fuzzy probability, areas of uncertainty. |
| spellingShingle | Vyacheslav M. Barbashov Nikolai S. Trushkin Features of the model of main information failures in digital CMOS VLSI at impact of the radiation Безопасность информационных технологий topological probabilistic models, fuzzy probability, areas of uncertainty. |
| title | Features of the model of main information failures in digital CMOS VLSI at impact of the radiation |
| title_full | Features of the model of main information failures in digital CMOS VLSI at impact of the radiation |
| title_fullStr | Features of the model of main information failures in digital CMOS VLSI at impact of the radiation |
| title_full_unstemmed | Features of the model of main information failures in digital CMOS VLSI at impact of the radiation |
| title_short | Features of the model of main information failures in digital CMOS VLSI at impact of the radiation |
| title_sort | features of the model of main information failures in digital cmos vlsi at impact of the radiation |
| topic | topological probabilistic models, fuzzy probability, areas of uncertainty. |
| url | https://bit.mephi.ru/index.php/bit/article/view/1091 |
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