Enhancing reliability of InGaN/GaN light-emitting diodes by controlling the etching profile of the current blocking layer
SiO _2 was used as the current blocking layer (CBL) during fabricating the InGaN/GaN-based light-emitting diodes (LEDs). The SiO _2 film was prepared by plasma enhanced chemical vapor deposition (PECVD) at a lower temperature (LT) of 180 °C and a higher temperature (HT) of 280 °C for characterizing...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2020-01-01
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| Series: | Materials Research Express |
| Subjects: | |
| Online Access: | https://doi.org/10.1088/2053-1591/ab7c84 |