Structural changes induced by argon ion irradiation in TiN thin films
In this work, the effects of 120 keV Ar+ ion implantation on the structural properties of TiN thin films were investigated. TiN layers were deposited by d.c. reactive sputtering on Si(100) wafers at room temperature or at 150°C. The thickness of TiN layers was ~240 nm. After deposition the samples w...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
University of Novi Sad
2011-03-01
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| Series: | Processing and Application of Ceramics |
| Subjects: | |
| Online Access: | http://www.tf.uns.ac.rs/publikacije/PAC/pdf/PAC%2011%2003.pdf |