Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Mid-infrared III–V semiconductor lasers epitaxially grown on Si substrates

Abstract There is currently much activity toward the integration of mid-infrared semiconductor lasers on Si substrates for developing a variety of smart, compact, sensors based on Si-photonics integrated circuits. We review this rapidly-evolving research field, focusing on the epitaxial integration...

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Bibliographic Details
Main Authors: Eric Tournié, Laura Monge Bartolome, Marta Rio Calvo, Zeineb Loghmari, Daniel A. Díaz-Thomas, Roland Teissier, Alexei N. Baranov, Laurent Cerutti, Jean-Baptiste Rodriguez
Format: Article
Language:English
Published: Nature Publishing Group 2022-06-01
Series:Light: Science & Applications
Online Access:https://doi.org/10.1038/s41377-022-00850-4

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https://doi.org/10.1038/s41377-022-00850-4

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