Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub> Gate Stacks

Impact of Channel Thickness on the NBTI Behaviors in the Ge-OI pMOSFETs With Al<sub>2</sub>O<sub>3</sub>/GeO<sub>x</sub> Gate Stacks

The impact of channel thickness on the negative-bias temperature instability (NBTI) behaviors has been studied for the Germanium-on-Insulator (Ge-OI) pMOSFETs. It is found that the permanent and recoverable defects are generated simultaneously during the NBTI stress of Ge-OI pMOSFETs. The lower NBTI...

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Bibliographic Details
Main Authors: Yu Sun, Walter Schwarzenbach, Sicong Yuan, Zhuo Chen, Yanbin Yang, Bich-Yen Nguyen, Dawei Gao, Rui Zhang
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Germanium-on-Insulator (Ge-OI)
metal-oxide-semiconductor field-effect transistor (MOSFET)
negative-bias temperature instability (NBTI)
Online Access:https://ieeexplore.ieee.org/document/10079114/

Internet

https://ieeexplore.ieee.org/document/10079114/

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