Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations
Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with t...
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MDPI AG
2020-06-01
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| Series: | Materials |
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| Online Access: | https://www.mdpi.com/1996-1944/13/12/2871 |
| _version_ | 1797564044243107840 |
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| author | Qiuling Wen Xinyu Wei Feng Jiang Jing Lu Xipeng Xu |
| author_facet | Qiuling Wen Xinyu Wei Feng Jiang Jing Lu Xipeng Xu |
| author_sort | Qiuling Wen |
| collection | DOAJ |
| description | Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching. |
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| format | Article |
| id | doaj.art-dd0769191d6d4d958b3ff75ee8f8c618 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-10T18:51:50Z |
| publishDate | 2020-06-01 |
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| series | Materials |
| spelling | doaj.art-dd0769191d6d4d958b3ff75ee8f8c6182023-11-20T05:04:53ZengMDPI AGMaterials1996-19442020-06-011312287110.3390/ma13122871Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-OrientationsQiuling Wen0Xinyu Wei1Feng Jiang2Jing Lu3Xipeng Xu4Institute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, ChinaInstitute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, ChinaInstitute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, ChinaInstitute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, ChinaInstitute of Manufacturing Engineering, Huaqiao University, Xiamen 361021, ChinaSapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.https://www.mdpi.com/1996-1944/13/12/2871sapphirefocused ion beamcrystal orientationetchingmaterial removal ratesurface roughness |
| spellingShingle | Qiuling Wen Xinyu Wei Feng Jiang Jing Lu Xipeng Xu Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations Materials sapphire focused ion beam crystal orientation etching material removal rate surface roughness |
| title | Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations |
| title_full | Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations |
| title_fullStr | Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations |
| title_full_unstemmed | Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations |
| title_short | Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations |
| title_sort | focused ion beam milling of single crystal sapphire with a c and m orientations |
| topic | sapphire focused ion beam crystal orientation etching material removal rate surface roughness |
| url | https://www.mdpi.com/1996-1944/13/12/2871 |
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