Composition and strain of the pseudomorphic α-phase intermediate layer at the Ga2O3/Al2O3 interface
We investigate the composition of α-phase intermediate layers at epitaxial Ga2O3/Al2O3 interfaces using high angle annular dark field scanning transmission electron microscopy. Their presence is considered a general phenomenon as they are observed independent of the growth technique [Schewski et al....
| Hauptverfasser: | , , , , , , , , , , , , |
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| Format: | Artikel |
| Sprache: | English |
| Veröffentlicht: |
AIP Publishing LLC
2024-09-01
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| Schriftenreihe: | APL Materials |
| Online Zugang: | http://dx.doi.org/10.1063/5.0226857 |